Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
MJE170/171/172
DESCRIPTION
・With
TO-126 package
・Complement
to type MJE180/181/182
APPLICATIONS
・For
low power audio amplifier and low
current high speed switching applications
PINNING (see Fig.2)
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute Maximun Ratings (Ta=25
℃)
SYMBOL
PARAMETER
MJE170
V
CBO
Collector-base voltage
MJE171
MJE172
MJE170
V
CEO
Collector-emitter voltage
MJE171
MJE172
V
EBO
I
C
I
CM
I
B
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
12.5
150
-65~150
℃
℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-60
-80
-100
-40
-60
-80
-7
-3
-6
-1
1.5
W
V
A
A
A
V
V
UNIT
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
