Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
CONDITIONS
I
C
=0.1A; L=25mH
I
C
=2A; I
B
=0.2A
T
C
=125℃
I
C
=4.5A; I
B
=0.9A
T
C
=125℃
I
C
=2A; I
B
=0.2A
I
C
=4.5A; I
B
=0.9A
MIN
450
MJE18008
TYP.
MAX
UNIT
V
0.6
0.65
0.7
0.8
1.10
1.25
0.1
0.5
T
C
=125℃
0.1
0.1
0.1
14
6
11
10
13
100
34
V
V
V
V
I
CES
Collector cut-off current
V
CES
=RatedV
CES;
V
EB
=0
mA
V
CES
=800V
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
h
FE-4
f
T
C
OB
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
Transition frequency
Collector outoput capacitance
V
CE
=RatedV
CEO
; I
B
=0
V
EB
=9V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=4.5A ; V
CE
=1V
I
C
=2A ; V
CE
=1V
I
C
=10mA ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V;f=1MHz
I
E
=0 ; V
CB
=10V;f=1MHz
mA
mA
MHz
pF
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs
t
on
t
off
t
on
t
off
Turn-on time
Turn-off time
Turn-on time
Turn-off time
0.3
2.5
0.18
2.5
μs
μs
μs
μs
V
CC
=300V ,I
C
=2A
I
B1
=0.2A; I
B2
=1.0A
V
CC
=300V ,I
C
=4.5A
I
B1
=0.9A; I
B2
=2.25A
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
