INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter
Sustaining Voltage—
: V
CEO(SUS)
= 40 V
·DC
Current Gain—
: h
FE
= 30(Min) @ I
C
= 0.5 A
= 12(Min) @ I
C
= 1.5 A
·Complement
to Type MJE170
APPLICATIONS
·Low
power audio amplifier
·Low
current high speed switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
MJE180
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current
Collector Power Dissipation
T
a
=25℃
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
60
40
7
3
6
1
1.5
UNIT
V
V
V
A
A
A
P
C
W
12.5
150
-65~150
℃
℃
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
10
83.4
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
