INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
MJE371
DESCRIPTION
·Collector–Emitter
Sustaining Voltage—
: V
CEO(SUS)
= -40V
·DC
Current Gain—
: h
FE
= 40(Min) @ I
C
= -1A
·Complement
to Type MJE521
APPLICATIONS
·Designed
for use in general-purpose amplifier and switching
circuits.
·Recommended
for use in 5~20 Watt audio amplifiers utilizing
complementary symmetry circuitry.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-40
-40
-4
-4
-8
-2
40
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
3.12
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
