Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
DESCRIPTION
・With
TO-220C package
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
・Complement
to type TIP100/101/102
APPLICATIONS
・For
industrial use
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
TIP105/106/107
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
PARAMETER
TIP105
V
CBO
Collector-base voltage
TIP106
TIP107
TIP105
V
CEO
Collector-emitter voltage
TIP106
TIP107
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current-DC
Collector current-peak
Base current-DC
T
C
=25℃
Collector power dissipation
T
a
=25℃
Junction temperature
Storage temperature
2
150
-65~150
℃
℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-60
-80
-100
-60
-80
-100
-5
-8
-15
-1
80
W
V
A
A
A
V
V
UNIT
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
