Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
DESCRIPTION
・With
TO-220C package
・DARLNGTON
・High
DC durrent gain
・Low
collector saturation voltage
・Complement
to type TIP120/121/122
APPLICATIONS
・Designed
for general–purpose amplifier
and low–speed switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
TIP125/126/127
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
PARAMETER
V
CBO
导�½�
半
ND
固电
ICO
SEM
GE
HAN
INC
CONDITIONS
TIP125
TIP126
Collector-base voltage
Open emitter
TIP127
TIP125
TIP126
TIP127
Collector-emitter voltage
Open base
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current-DC
T
C
=25℃
Collector power dissipation
T
a
=25℃
Open collector
OR
CT
U
VALUE
-60
-80
-100
-60
-80
-100
-5
-5
-8
-120
65
UNIT
V
V
CEO
V
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
V
A
A
mA
W
2
150
-65~150
℃
℃
Junction temperature
Storage temperature
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
