INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
TIP130
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 1000(Min)@ I
C
=
4A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 60V(Min)
·Low
Collector-Emitter Saturation Voltage-
: V
CE(sat)
= 2.0V(Max)@ I
C
=
4A
·Complement
to Type TIP135
APPLICATIONS
·Designed
for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
@T
C
=25℃
Collector Power Dissipation
@T
a
=25℃
Junction Temperature
Storage Temperature Range
VALUE
60
60
5
8
12
0.3
70
UNIT
V
V
V
A
A
A
P
C
W
2
150
-65~150
℃
℃
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.785
63.5
UNIT
℃/W
℃/W
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ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
