Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
DESCRIPTION
・With
TO-3PN package
・DARLINGTON
・High
DC current gain
・Complement
to type TIP140/141/142
APPLICATIONS
・Designed
for general–purpose amplifier and
low frequency switching applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
TIP145/146/147
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
PARAMETER
TIP145
V
CBO
Collector-base voltage
TIP146
TIP147
TIP145
V
CEO
Collector-emitter voltage
TIP146
TIP147
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current-DC
Collector current-peak
Base current-DC
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-60
-80
-100
-60
-80
-100
-5
-10
-15
-0.5
125
150
-65~150
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-A
PARAMETER
Thermal resistance junction to case
Thermal resistance case to ambient
MAX
1.0
35.7
UNIT
℃/W
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
