INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
TIP30
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -40V(Min)
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= -0.7V(Max.)@I
C
= -1.0A
·Complement
to Type TIP29
APPLICATIONS
·Designed
for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Ttemperature Range
VALUE
-40
-40
-5
-1
-3
-0.4
30
150
-65~150
UNIT
V
V
V
A
A
A
w
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
4.17
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
