Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
TIP31
TIP31A
I
C
=30mA; I
B
=0
TIP31B
TIP31C
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter on voltage
TIP31
TIP31A
TIP31B
TIP31C
TIP31/31A
TIP31B/31C
I
C
=3A I
B
=0.375A
I
C
=3A ; V
CE
=4V
V
CE
=40V; V
EB
=0
V
CE
=60V; V
EB
=0
CONDITIONS
TIP31/31A/31B/31C
MIN
40
60
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
80
100
1.2
1.8
V
V
I
CES
Collector
cut-off current
固电
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
导�½�
半
0.2
V
CE
=80V; V
EB
=0
V
CE
=100V; V
EB
=0
V
CE
=30V; I
B
=0
V
CE
=60V; I
B
=0
V
EB
=5V; I
C
=0
mA
Collector
cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transiton frequency
IN
ES
ANG
CH
ND
ICO
EM
25
10
3
OR
UCT
0.3
1.0
mA
mA
I
C
=1A ; V
CE
=4V
I
C
=3A ; V
CE
=4V
50
MHz
I
C
=0.5A ; V
CE
=10V
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
