Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
TIP31/31A/31B/31C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
TIP31
CONDITIONS
MIN
40
TYP.
MAX
UNIT
TIP31A
TIP31B
TIP31C
60
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=30mA; IB=0
V
80
100
VCEsat
VBE
Collector-emitter saturation voltage
Base-emitter on voltage
TIP31
IC=3A IB=0.375A
IC=3A ; VCE=4V
VCE=40V; VEB=0
VCE=60V; VEB=0
VCE=80V; VEB=0
VCE=100V; VEB=0
VCE=30V; IB=0
VCE=60V; IB=0
VEB=5V; IC=0
1.2
1.8
V
V
TIP31A
Collector
ICES
0.2
mA
cut-off current
TIP31B
TIP31C
TIP31/31A
Collector
ICEO
0.3
1.0
mA
mA
cut-off current
TIP31B/31C
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
IC=1A ; VCE=4V
IC=3A ; VCE=4V
IC=0.5A ; VCE=10V
25
10
3
DC current gain
50
Transiton frequency
MHz
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
