Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・Complement
to type TIP36/36A/36B/36C
・DC
current gain h
FE
=25(Min)@I
C
=1.5A
APPLICATIONS
・Designed
for use in general purpose
power amplifier and switching applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
TIP35/35A/35B/35C
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
电半
固
IN
PARAMETER
导�½�
CONDITIONS
TIP35
TIP35A
TIP35B
Collector-base voltage
V
CEO
Collector-emitter voltage
ANG
CH
TIP35C
TIP35
MIC
E SE
Open emitter
Open base
Open collector
ND
O
OR
UCT
VALUE
40
60
80
100
40
60
UNIT
V
TIP35A
TIP35B
V
80
100
5
25
40
5
V
A
A
A
W
℃
℃
TIP35C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
125
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.0
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
