INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
TIP48
DESCRIPTION
·DC
Current Gain -h
FE
= 30~150@ I
C
=
0.3A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 300V(Min)
APPLICATIONS
·Designed
for line operated audio output amplifier,switchmode
power supply drivers and other switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
T
C
=25℃
Collector Power Dissipation
T
a
=25℃
Junction Temperature
Storage Temperature Range
VALUE
400
300
5
1.0
2.0
0.6
40
UNIT
V
V
V
A
A
A
P
D
W
2
150
-65~150
℃
℃
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
3.125
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
