Forward Current vs. Ambient Temperature
80
70
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Region of Linear Resistance
(mV)
(
µ
A)
100
40
20
10
4
2
0
100
1000
10k
100k
On-state resistance r (on) (
Ω)
Input Current vs. Input Voltage
100
40
Forward current I
F
(mA)
20
10
4
2
1
0.4
0.2
0.1
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Forward voltage V
F
(V)
7/12/00
On-state Resistance vs. Ambient Temperature
3
Normalized on-state resistance r (on)
Normalized to
I
F
= 16mA
I
46
= 25
µ
A
T
A
= 25 °C
2
1
0.8
0.6
observed
range
median
device
0.4
-50
-25
0
25
50
75
100
Ambient temperature T
A
( °C )
Normalized Off-state current vs.
Ambient Temperature
100
maximum
RMS voltage
40
20
maximum
RMS current
Ex
tra
10000
46
Maximum RMS signal voltage V
Maximum RMS signal current I
46
Normalized dark current
1000
10
100
4
po
lat
ed
10
2
0
Normalized to
V
46
= 15V
I
F
= 0
T
A
= 25 °C
0
25
50
75
100
1.0
Ambient temperature T
A
( °C )
Resistive non-linearity vs.
D.C. Bias
5
Change in resistance
∆
r (on)
(%)
4
T
A
= 75°C
25°C
-25°C
3
2
I
46
= 10
µ
A RMS
r (on) =
200Ω
1
0
0
50
100 150
200
250
300
350
D.C. bias voltage V
46
(mV)
DB91018-AAS/A3