ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
(derate linearly 2.67mW/°C above 25°C)
80V
6V
150mW
200mW
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
80
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
ISP321-1, ISP321-2, ISP321-4
CTR selection available
GB
BL
GB
Collector-emitter Saturation VoltageV
CE (SAT)
GB
Input to Output Isolation Voltage V
ISO
50
100
200
30
MIN TYP MAX UNITS
1.0
1.15
1.3
10
V
µ
A
TEST CONDITION
I
F
= 10mA
V
R
= 4V
I
C
= 0.5mA
I
E
= 100
µ
A
V
CE
= 48V
5mA I
F
, 5V V
CE
1mA I
F
, 0.4V V
CE
8mA I
F
, 2.4mA I
C
1mA I
F
, 0.2mA I
C
See note 1
V
V
nA
100
Coupled
600
600
600
0.4
0.4
5300
7500
%
%
%
%
V
V
V
RMS
V
PK
Ω
µ
s
µ
s
Input-output Isolation Resistance R
ISO
5x10
10
Response Time (Rise, tr)
4
Response Time (Fall, tf)
3
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 2mA, R
L
= 100
Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
24/3/03
DB91075m-AAS/A3