ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
40V
6V
150mW
MIN TYP MAX UNITS
1.2
1.4
10
40
6
V
µ
A
TEST CONDITION
I
F
= 10mA
V
R
= 4V
I
C
= 0.5mA
I
E
= 100
µ
A
V
V
Emitter-collector Breakdown (BV
ECO
)
Coupled
Current Transfer Ratio (CTR) (Note 2
)
200
2000
%
1mA I
F
, 2V V
CE
Collector-emitter Saturation VoltageV
CE (SAT)
Input to Output Isolation Voltage V
ISO
5300
7500
1.0
V
V
RMS
V
PK
Ω
µ
s
µ
s
1mA I
F
, 2mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 10mA, R
L
= 100
Ω
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time
Output Fall Time
tr
tf
60
53
300
250
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
30/4/03
DB92306m-AAS/A8
ISOCOM [ ISOCOM COMPONENTS ]
