ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
Operating Temperature
-55°C to + 125°C
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
5V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
35V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
1.2
1.4
10
V
V
µA
IF = 20mA
IR = 10µA
VR = 5V
5
Output
Collector-emitter Breakdown (BV
)
35
6
V
V
IC =0.5mA
( NoCteEO2 )
Emitter-collector Breakdown (BVECO
Collector-emitter Dark Current (ICEO
)
)
IE = 100µA
VCE = 24V
100 nA
Coupled Current Transfer Ratio (CTR) (Note 2)
TIL191, TIL192, TIL193
20
50
100
%
%
%
5mA IF , 5V VCE
5mA IF , 1mA IC
TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
Collector-emitter Saturation VoltageVCE (SAT)
0.4
V
Input to Output Isolation Voltage VISO 5300
7500
VRMS
VPK
Ω
µs
µs
See note 1
See note 1
VIO = 500V (note 1)
VC C = 5V ,
IC = 2mA, RL = 100Ω
Input-output Isolation Resistance RISO 5x1010
Output Rise Time tr
6
6
Output Fall Time tf
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
Note 2
7/12/00
DB92493m-AAS/A2
ISOCOM [ ISOCOM COMPONENTS ]
