®
IS41LV16100B
1M x 16 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI
APRIL2005
FEATURES
DESCRIPTION
• TTL compatible inputs and outputs; tristate I/O
TheISSIIS41LV16100Bis1,048,576x16-bithigh-perfor-
manceCMOS DynamicRandomAccessMemories. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 1,024 random ac-
cesses within a single row with access cycle time as short
as 20 ns per 16-bit word.
• Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
—
RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
ThesefeaturesmaketheIS41LV16100Bideallysuited for
high-bandwidthgraphics, digitalsignalprocessing, high-
performance computing systems, and peripheral
applications.
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available
The IS41LV16100B is packaged in a 42-pin 400-mil SOJ
and 400-mil 50- (44-) pin TSOP (Type II).
KEY TIMING PARAMETERS
Parameter
-50
50
-60
60
Unit
ns
PIN CONFIGURATIONS
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
50(44)-Pin TSOP (Type II)
42-PinSOJ
14
15
ns
Max. Column Address Access Time (tAA) 25
30
ns
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
1
44
43
42
41
40
39
38
37
36
35
34
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
1
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
Min. EDO Page Mode Cycle Time (tPC)
Min. Read/Write Cycle Time (tRC)
30
85
40
ns
2
2
3
3
110
ns
4
4
5
5
6
6
7
PIN DESCRIPTIONS
7
8
8
9
A0-A9
I/O0-15
WE
Address Inputs
DataInputs/Outputs
WriteEnable
9
10
11
I/O8
10
11
12
13
14
15
16
17
18
19
20
21
NC
NC
NC
WE
RAS
NC
NC
A0
12
13
14
15
16
17
18
19
20
21
22
33
32
31
30
29
28
27
26
25
24
23
NC
NC
LCAS
UCAS
OE
LCAS
UCAS
OE
WE
RAS
NC
OE
OutputEnable
A9
RAS
UCAS
LCAS
VDD
RowAddressStrobe
A9
NC
A8
A8
UpperColumnAddressStrobe
LowerColumnAddressStrobe
Power
A0
A7
A7
A1
A6
A1
A6
A2
A5
A2
A5
A3
A4
A3
A4
VDD
GND
VDD
GND
GND
NC
Ground
NoConnection
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
1
04/14/05
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
