®
IS61LV25616AL
256K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
ISSI
FEBRUARY2003
DESCRIPTION
FEATURES
The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS technol-
ogy. This highly reliable process coupled with innovative
circuitdesigntechniques,yieldshigh-performanceandlow
powerconsumptiondevices.
• High-speed access time:
— 10, 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mA (typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
• Fully static operation: no clock or refresh
required
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
The IS61LV25616AL is packaged in the JEDEC standard
44-pin400-milSOJ,44-pinTSOPTypeII,44-pinLQFPand
48-pin Mini BGA (8mm x 10mm).
FUNCTIONAL BLOCK DIAGRAM
256K x 16
MEMORY ARRAY
A0-A17
DECODER
VDD
GND
I/O0-I/O7
Lower Byte
I/O
DATA
CIRCUIT
COLUMN I/O
I/O8-I/O15
Upper Byte
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
1
02/21/03
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
