®
IS61LV51216
ISSI
512K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
MARCH 2005
FEATURES
DESCRIPTION
The ISSI IS61LV51216 is a high-speed, 8M-bit static RAM
organized as 525,288 words by 16 bits. It is fabricated using
ISSI'shigh-performanceCMOStechnology.Thishighlyreliable
process coupled with innovative circuit design techniques,
yields high-performance and low power consumption devices.
• High-speed access time:
— 8, 10, and 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mA (typ.) CMOS stand-by
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
Easy memory expansion is provided by using Chip Enable and
OutputEnableinputs,CEandOE.TheactiveLOWWriteEnable
(WE) controls both writing and reading of the memory. A data
byte allows Upper Byte (UB) and Lower Byte (LB) access.
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
The IS61LV51216 is packaged in the JEDEC standard
44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).
FUNCTIONAL BLOCK DIAGRAM
512K x 16
MEMORY ARRAY
A0-A18
DECODER
VDD
GND
I/O0-I/O7
Lower Byte
I/O
DATA
COLUMN I/O
CIRCUIT
I/O8-I/O15
Upper Byte
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
1
03/10/05
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
