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AS7C33512PFS16A-133TQI 参数 Datasheet PDF下载

AS7C33512PFS16A-133TQI图片预览
型号: AS7C33512PFS16A-133TQI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX16, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 13 页 / 268 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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May 2003  
AS7C33512PFS16A  
AS7C33512PFS18A  
®
3.3V 512K × 16/18 pipelined burst synchronous SRAM  
Features  
• Multiple chip enables for easy expansion  
• 3.3V core power supply  
• 2.5V or 3.3V I/ O operation with separate V  
• Organization: 524,288 words × 16 or 18 bits  
Fast clock speeds to 166 MHz in LVTTL/ LVCMOS  
Fast clock to data access: 3.5/ 3.8/ 4.0/ 5.0 ns  
Fast OEaccess time: 3.5/ 3.8/ 4.0/ 5.0 ns  
Fully synchronous register-to-register operation  
Single register “flow-through” option  
Single-cycle deselect  
DDQ  
• 30 mW typical standby power in power down mode  
1
• NTD™ pipeline architecture available  
(AS7C33512NTD16A/ AS7C33512NTD18A)  
Asynchronous output enable control  
Available in 100-pin TQFP  
Byte write enables  
1. NTD™ is a trademark of Alliance Semiconductor Corporation. All  
trademarks mentioned in this document are the property of their respec-  
tive owners.  
Logic block diagram  
Pin arrangement for TQFP  
LBO  
CLK  
CLK  
CE  
CLR  
ADV  
ADSC  
ADSP  
Burst logic  
512K × 16/ 18  
A
NC  
NC  
1
80  
79  
78  
77  
76  
75  
74  
73  
72  
71  
70  
69  
68  
67  
66  
65  
64  
63  
62  
61  
60  
59  
58  
57  
56  
55  
54  
53  
52  
51  
NC  
NC  
VDDQ  
2
Memory  
array  
2
2
19  
NC  
3
19 17  
19  
AddresQs  
register  
V
D
A[18:0]  
VDDQ  
4
V
5
SSQ  
SSQ  
CS  
NC  
NC  
NC  
6
DQpa/ NC  
DQa  
7
CLK  
DQb  
DQb  
8
DQa  
9
16/ 18  
16/ 18  
V
V
10  
11  
SSQ  
SSQ  
VDDQ  
DQa  
DQa  
VSS  
V
DDQ  
GWE  
BW  
b
D
Q
DQb  
DQb 12  
DQb 13  
FT 14  
Byte Write  
registers  
TQFP 14 × 20mm  
BWE  
VDD  
NC  
VDD  
ZZ  
15  
CLK  
NC 16  
17  
D
Q
DQa  
V
SS  
2
BW  
a
Byte Write  
DQa  
DQa  
VDDQ  
DQb 18  
DQb 19  
VDDQ 20  
registers  
CLK  
V
V
21  
SSQ  
DSQSQb 22  
CE0  
CE1  
CE2  
OE  
DEnableQ  
register  
Input  
DQa  
DQa  
NC  
Output  
DQb 23  
registers  
registers  
DQpb/ NC 24  
NC 25  
CE  
NC  
CLK  
CLK  
CLK  
V
V
26  
27  
SSQ  
SSQ  
VDDQ  
NC  
V
DEnableQ  
DDQ  
NC 28  
NC 29  
NC 30  
Power  
down  
delay  
ZZ  
NC  
register  
NC  
CLK  
OE  
16/ 18  
DQ[a,b]  
Note: Pins 24 and 74 are NC for x 16.  
FT  
Selection guide  
–166  
6
–150  
6.6  
–133  
7.5  
133  
4
–100  
10  
Units  
ns  
Minimum cycle time  
Maximum pipelined clock frequency  
Maximum pipelined clock access time  
Maximum operating current  
166  
3.5  
475  
130  
30  
150  
3.8  
100  
5
MHz  
ns  
450  
110  
30  
425  
100  
30  
325  
90  
mA  
mA  
mA  
Maximum standby current  
Maximum CMOS standby current (DC)  
30  
5/ 9/ 03, v.1.8.1  
Alliance Semiconductor  
1 of 13  
Copyright © Alliance Semiconductor. All rights reserved.