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IC42S16100E-7TL 参数 Datasheet PDF下载

IC42S16100E-7TL图片预览
型号: IC42S16100E-7TL
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 81 页 / 1082 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS42S16100E  
IC42S16100E  
512K Words x 16 Bits x 2 Banks (16-MBIT)  
SYNCHRONOUS DYNAMIC RAM  
JANUARY 2008  
FEATURES  
DESCRIPTION  
• Clock frequency: 200, 166, 143 MHz  
ISSI’s 16Mb Synchronous DRAM IS42S16100E/  
IC42S16100E is organized as a 524,288-word x 16-bit  
x 2-bank for improved performance. The synchronous  
DRAMs achieve high-speed data transfer using pipeline  
architecture. All inputs and outputs signals refer to the  
rising edge of the clock input.  
• Fully synchronous; all signals referenced to a  
positive clock edge  
• Two banks can be operated simultaneously and  
independently  
• Dual internal bank controlled by A11  
(bank select)  
PIN CONFIGURATIONS  
50-Pin TSOP (Type II)  
• Single 3.3V power supply  
• LVTTL interface  
VDD  
DQ0  
DQ1  
GNDQ  
DQ2  
DQ3  
VDDQ  
DQ4  
DQ5  
GNDQ  
DQ6  
DQ7  
VDDQ  
LDQM  
WE  
1
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
GND  
DQ15  
IDQ14  
GNDQ  
DQ13  
DQ12  
VDDQ  
DQ11  
DQ10  
GNDQ  
DQ9  
DQ8  
VDDQ  
NC  
UDQM  
CLK  
CKE  
NC  
A9  
A8  
A7  
A6  
A5  
• Programmable burst length  
– (1, 2, 4, 8, full page)  
2
3
4
5
• Programmable burst sequence:  
Sequential/Interleave  
6
7
8
• 2048 refresh cycles every 32 ms  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
• Random column address every clock cycle  
• Programmable CAS latency (2, 3 clocks)  
• Burst read/write and burst read/single write  
CAS  
RAS  
CS  
operations capability  
• Burst termination by burst stop and  
A11  
A10  
A0  
A1  
precharge command  
• Byte controlled by LDQM and UDQM  
A2  
A3  
VDD  
• Packages 400-mil 50-pin TSOP-II and 60-ball  
BGA  
A4  
GND  
• Lead-free package option  
• Available in Industrial Temperature  
PIN DESCRIPTIONS  
A0-A11  
A0-A10  
A11  
Address Input  
CAS  
WE  
Column Address Strobe Command  
Row Address Input  
Bank Select Address  
Column Address Input  
Data DQ  
Write Enable  
LDQM Lower Bye, Input/Output Mask  
UDQM Upper Bye, Input/Output Mask  
A0-A7  
DQ0 to DQ15  
CLK  
VDD  
GND  
Power  
System Clock Input  
Clock Enable  
Ground  
CKE  
VDDQ Power Supply for DQ Pin  
GNDQ Ground for DQ Pin  
CS  
Chip Select  
RAS  
Row Address Strobe Command  
NC  
No Connection  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the  
latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. C  
01/22/08