IS27HC010
IS27HC010
131,072 x 8 HIGH-SPEED CMOS EPROM
ISSI
JULY 1997
ISSI
®
®
FEATURES
• Fast read access time: 30 ns
• Pin compatible with the IS27C010
• High-speed write programming
— Typically less than 30 seconds
• Industrial and commercial temperature ranges
available
•
±10%
power supply tolerance
• JEDEC-approved pinout
• Standard 32-pin DIP, PLCC, and TSOP
packages
DESCRIPTION
The
ISSI
IS27HC010 is an ultra-high-speed 1 megabit (128K-
word by 8-bit) Ultraviolet Erasable CMOS Programmable
Read-Only Memory. It utilizes the standard JEDEC pinout
making it functionally compatible with the IS27C010, but with
significantly faster access capability. This superior random
access capability results from a focused high-speed design.
This offers users bipolar speeds with higher density, lower
cost, and proven reliability.
The device is ideal for use with the faster processors. Design-
ers may take full advantage of high-speed digital signal
processors and microprocessors by allowing code to be
executed at full speed directly out of EPROM. Typical applica-
tions include laser printers, switching networks, graphics,
workstations, high-speed modems, and digital signal process-
ing.
The IS27HC010 uses
ISSI
'
s write programming algorithm
which allows the entire chip to be programmed in typically less
than 30 seconds.
This product is available inOne-Time Programmable (OTP)
PDIP, PLCC, and TSOP packages over commercial and
industrial temperature ranges.
FUNCTIONAL BLOCK DIAGRAM
VCC
GND
VPP
DQ0-DQ7
8
OE
CE
PGM
OUTPUT ENABLE
CHIP ENABLE
AND
PROG LOGIC
OUTPUT
BUFFERS
Y
DECODER
A0-A16
Y
GATING
17
X
DECODER
1,048,576-BIT
CELL MATRIX
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1997, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc.
EP009-1F
07/18/97
1
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
