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IS41LV16100B-60KI 参数 Datasheet PDF下载

IS41LV16100B-60KI图片预览
型号: IS41LV16100B-60KI
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16 ( 16兆位)动态RAM与EDO页模式 [1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 22 页 / 143 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS41LV16100B
1M x 16 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— Auto refresh Mode:
1,024 cycles /16 ms
RAS-Only, CAS-before-RAS
(CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two
CAS
• Industrial Temperature Range: -40
o
C to +85
o
C
• Lead-free available
ISSI
APRIL 2005
®
DESCRIPTION
The
ISSI
IS41LV16100B is 1,048,576 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 1,024 random ac-
cesses within a single row with access cycle time as short
as 20 ns per 16-bit word.
These features make the IS41LV16100B ideally suited for
high-bandwidth graphics, digital signal processing, high-
performance computing systems, and peripheral
applications.
The IS41LV16100B is packaged in a 42-pin 400-mil SOJ
and 400-mil 50- (44-) pin TSOP (Type II).
KEY TIMING PARAMETERS
Parameter
-50
50
14
25
30
85
-60
60
15
30
40
110
Unit
ns
ns
ns
ns
ns
PIN CONFIGURATIONS
50(44)-Pin TSOP (Type II)
42-Pin SOJ
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
Max. Column Address Access Time (t
AA
)
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Min. EDO Page Mode Cycle Time (t
PC
)
Min. Read/Write Cycle Time (t
RC
)
PIN DESCRIPTIONS
A0-A9
I/O0-15
WE
OE
RAS
UCAS
LCAS
V
DD
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
04/14/05
1