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IS41LV16105B-50TL 参数 Datasheet PDF下载

IS41LV16105B-50TL图片预览
型号: IS41LV16105B-50TL
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16 ( 16兆位)动态RAM具有快速页面模式 [1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE]
分类和应用:
文件页数/大小: 20 页 / 131 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS41LV16105B
1M x 16 (16-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— 1,024 cycles/16 ms
• Refresh Mode:
RAS-Only, CAS-before-RAS
(CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two
CAS
• Extended Temperature Range: -30
o
C to +85
o
C
• Industrial Temperature Range: -40
o
C to +85
o
C
• Lead-free available
ISSI
APRIL 2005
®
DESCRIPTION
The
ISSI
IS41LV16105B is 1,048,576 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories. Fast Page
Mode allows 1,024 random accesses within a single row with
access cycle time as short as 20 ns per 16-bit word. The Byte
Write control, of upper and lower byte, makes the IS41LV16105B
ideal for use in 16-, 32-bit wide data bus systems.
These features make the IS41LV16105B ideally suited for high-
bandwidth graphics, digital signal processing, high-performance
computing systems, and peripheral applications.
The IS41LV16105B is packaged in a 42-pin 400-mil SOJ and
400-mil 44- (50-) pin TSOP (Type II).
KEY TIMING PARAMETERS
Parameter
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
Max. Column Address Access Time (t
AA
)
Min. Fast Page Mode Cycle Time (t
PC
)
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
-50
50
13
25
20
84
-60
60
15
30
25
104
Unit
ns
ns
ns
ns
ns
PIN CONFIGURATIONS
44(50)-Pin TSOP (Type II)
42-Pin SOJ
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
Min. Read/Write Cycle Time (t
RC
)
PIN DESCRIPTIONS
A0-A9
I/O0-15
WE
OE
RAS
UCAS
LCAS
V
DD
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
1