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IS42S16100-6T 参数 Datasheet PDF下载

IS42S16100-6T图片预览
型号: IS42S16100-6T
PDF下载: 下载PDF文件 查看货源
内容描述: 512K字×16位×2组( 16兆位)同步动态RAM [512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 78 页 / 740 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS42S16100
512K Words x 16 Bits x 2 Banks (16-MBIT)
SYNCHRONOUS DYNAMIC RAM
FEATURES
• Clock frequency: 166, 143, 100 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Two banks can be operated simultaneously and
independently
• Dual internal bank controlled by A11 (bank
select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Auto refresh, self refresh
• 4096 refresh cycles every 128 ms
• Random column address every clock cycle
• Programmable
CAS
latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
• Byte controlled by LDQM and UDQM
• Package 400-mil 50-pin TSOP II
ISSI
NOVEMBER 2001
®
DESCRIPTION
ISSI
’s 16Mb Synchronous DRAM IS42S16100 is
organized as a 524,288-word x 16-bit x 2-bank for
improved performance. The synchronous DRAMs
achieve high-speed data transfer using pipeline
architecture. All inputs and outputs signals refer to the
rising edge of the clock input.
PIN CONFIGURATIONS
50-Pin TSOP (Type II)
VCC
I/O0
I/O1
GNDQ
I/O2
I/O3
VCCQ
I/O4
I/O5
GNDQ
I/O6
I/O7
VCCQ
LDQM
WE
CAS
RAS
CS
A11
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
GND
I/O15
I/O14
GNDQ
I/O13
I/O12
VCCQ
I/O11
I/O10
GNDQ
I/O9
I/O8
VCCQ
NC
UDQM
CLK
CKE
NC
A9
A8
A7
A6
A5
A4
GND
PIN DESCRIPTIONS
A0-A11
A0-A10
A11
A0-A7
I/O0 to I/O15
CLK
CKE
CS
RAS
Address Input
Row Address Input
Bank Select Address
Column Address Input
Data I/O
System Clock Input
Clock Enable
Chip Select
Row Address Strobe Command
CAS
WE
LDQM
UDQM
Vcc
GND
VccQ
GNDQ
NC
Column Address Strobe Command
Write Enable
Lower Bye, Input/Output Mask
Upper Bye, Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
11/01/01
1