IS42S16100C1
ISSI
Speed
Min.
–5
–5
2.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
5
5
—
0.4
170
160
140
160
3
4
2
3
40
30
30
170
150
130
150
170
150
130
150
120
100
70
90
120
100
70
90
1
Unit
µA
µA
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
m
mA
mA
mA
mA
mA
mA
mA
mA
mA
®
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
I
IL
Input Leakage Current
I
OL
V
OH
V
OL
I
CC1
Test Condition
0V
≤
V
IN
≤
VDD, with pins other than
the tested pin at 0V
Output Leakage Current
Output is disabled, 0V
≤
V
OUT
≤
VDD
Output High Voltage Level I
OUT
= –2 mA
Output Low Voltage Level I
OUT
= +2 mA
Operating Current
(1,2)
One Bank Operation,
CAS
latency = 3
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
Precharge Standby CurrentCKE
≤
V
IL
(
MAX
)
t
CK
= t
CK
(
MIN
)
(In Power-Down Mode)
Active Standby Current
CKE
≥
V
IH
(
MIN
)
(In Non Power-Down Mode)
Operating Current
(In Burst Mode)
(1)
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
t
CK
=
∞
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
CAS
latency = 3
I
CC2P
I
CC2PS
I
CC3N
I
CC3NS
I
CC4
Com.
Com.
Com.
Ind.
Com.
Ind.
Com.
Ind.
Com.
Ind.
Com.
Com.
Com.
Ind.
Com.
Com.
Com.
Ind.
Com.
Com.
Com.
Ind.
Com.
Com.
Com.
Ind.
CAS
latency = 2
I
CC5
Auto-Refresh Current
t
RC
= t
RC
(
MIN
)
CAS
latency = 3
CAS
latency = 2
I
CC6
Self-Refresh Current
CKE
≤
0.2V
-5
-6
-7
-7
—
—
—
—
—
—
—
-5
-6
-7
-7
-5
-6
-7
-7
-5
-6
-7
-7
-5
-6
-7
-7
—
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between V
DD
and GND for each
memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc
1
and Icc
4
depend on the output load. The maximum values for Icc
1
and Icc
4
are obtained with the output open state.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
07/21/04
5
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
