®
IS42S81600A, IS42S16800A, IS42S32400A
ISSI
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VDD MAX
VDDQ MAX
VIN
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
–0.5to+4.6
0.5to+4.6
–0.5to+4.6
–0.5to+4.6
1
V
V
V
VOUT
Output Voltage
V
PD MAX
ICS
Allowable Power Dissipation
OutputShortedCurrent
W
mA
°C
50
TOPR
Operating Temperature
Com.
Ind.
0to+70
–40to+85
TSTG
Storage Temperature
–55to+125
°C
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
2. All voltages are referenced to Vss.
DC RECOMMENDED OPERATING CONDITIONS(2) (At TA = 0 to +70°C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
3.0
3.0
2.0
-0.3
3.3
3.3
—
3.6
3.6
V
V
V
V
VDDQ
I/O Supply Voltage
Input High Voltage
Input Low Voltage
(1)
VIH
VDDQ +0.3
+0.8
(2)
VIL
—
Note:
1. VIH (max) = VDDQ +1.5V (PULSE WIDTH < 5NS).
2. VIL (min) = -1.5V (PULSE WIDTH < 5NS).
CAPACITANCE CHARACTERISTICS (At TA = 0 to +25°C, VDD = VDDQ= 3.3 ± 0.3V, f = 1 MHz)
Symbol
Parameter
Typ.
Max.
Unit
CIN1
CIN2
CI/O
Input Capacitance: CLK
—
—
—
3.5
3.8
6.5
pF
pF
pF
Input Capacitance:All other input pins
DataInput/OutputCapacitance:I/Os
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARYINFORMATION Rev. 00C
15
01/20/05
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
