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IS42S16160C-7TLI 参数 Datasheet PDF下载

IS42S16160C-7TLI图片预览
型号: IS42S16160C-7TLI
PDF下载: 下载PDF文件 查看货源
内容描述: 256 MB单倍数据速率同步DRAM [256 Mb Single Data Rate Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 40 页 / 1540 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS42S83200C  
IS42S16160C  
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES  
Register Programmed with Normal MRS  
Address  
BA0  
BA1  
A12  
A11  
A10/AP  
A9*2  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
Function  
CAS Latency  
BT  
Burst Length  
0
0
0
0
0
0
0
0
Normal MRS Mode  
CAS Latency  
Burst Type  
Burst Length  
A6  
0
0
0
0
1
1
1
1
A5  
0
0
1
1
0
0
1
1
A4  
0
1
0
1
0
1
0
1
Latency  
Reserved  
1
A3  
0
1
Type  
Sequential  
Interleave  
A2 A1 A0  
BT=0  
1
2
4
BT=1  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
2
4
8
2
3
8
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Full Page  
Reserved  
Reserved  
Reserved  
Reserved  
B. POWER UP SEQUENCE  
1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.  
- Apply VDD before or at the same time as VDDQ.  
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.  
3. Issue precharge commands for all banks of the devices.  
4. Issue 2 or more auto-refresh commands.  
5. Issue a mode register set command to initialize the mode register.  
C. BURST SEQUENCE  
STARTING COLUMN  
ADDRESS  
ORDER OF ACCESSES WITHIN A BURST  
TYPE=SEQUENTIAL TYPE=INTERLEAVED  
BURST LENGTH  
A0  
0
2
0-1  
0-1  
1
1-0  
1-0  
A1 A0  
0
0
1
1
0
1
0
1
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
4
A2 A1 A0  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
8
Cn, Cn+1, Cn+2, Cn+3,  
Cn+4..., …Cn-1, Cn…  
Full Page (y)  
N=A0 – A8 (location 0 – y)  
Not Supported  
NOTE:  
1. For full-page accesses: y = 512.  
2. For a burst length of two, A1–A8 select the block-of-two burst; A0 selects the starting column within the block.  
3. For a burst length of four, A2–A8 select the block-of-four burst; A0–A1 select the starting column within the block.  
4. For a burst length of eight, A3–A8 select the block-of-eight burst; A0–A2 select the starting column within the block.  
5. For a full-page burst, the full row is selected and A0–A8 select the starting column.  
6. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block.  
7. For a burst length of one, A0–A8 select the unique column to be accessed, and mode register bit M3 is ignored.  
14  
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. C  
04/02/09