IS42S83200C
IS42S16160C
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V,
Commerical grade:T
A
= 0 to 70 C,
Industrial grade:T
A
= -40 to 85
±± ±
±
C)
Version
Organization
Parameter
Symbol
Test Condition
Unit
Note
-6
-7
-75
Burst length = 1
t
RC !
t
RC
(min)
I
O
= 0 mA
o
o
Operating Current
(One Bank Active)
X8
X 16
X 8 / X 16
X 8 / X 16
140
140
15
5
140
140
15
5
130
mA
135
15
mA
5
I
CC1
1
Precharge Standby
Current in
power-down mode
I
CC2
P
I
CC2
PS
CKE
!V
IL
(max), t
CC
= 10ns
! V
IL
(max), t
CC
=
CKE & CLK
Precharge Standby
Current
in non power-down
mode
I
CC2
N
I
CC2
NS
I
CC3
P
I
CC3
PS
CKE ! V
IH
(min), CS ! V
IH
(min),
t
CC
= 10ns
X 8 / X 16
Input signals are changed one
time during 20ns
CKE
! V
IH
(min), CLK
!
X 8 / X 16
V
IL
(max), t
CC
= !
Input signals are stable
CKE
!V
IL
(max), t
CC
= 10ns
! V
IL
(max), t
CC
=
40
40
40
mA
30
50
20
30
50
20
30
50
20
Active Standby
Current
in power-down mode
X 8 / X 16
X 8 / X 16
mA
CKE & CLK
Active Standby
Current
in non power-down
mode
(One Bank Active)
I
CC3
N
CKE ! V
IH
(min), CS ! V
IH
(min),
t
CC
= 10ns
Input signals are changed one
time during 20ns
CKE ! V
IH
(min), CLK
V
IL
(max), t
CC
= !
Input signals are stable
!
X 8 / X 16
65
65
65
mA
I
CC3
NS
X 8 / X 16
45
45
45
Operating Current
(Burst Mode)
I
CC
4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
X 8 / X 16
180
180
180
mA
1
Refresh Current
Self Refresh Current
I
CC
5
I
CC
6
t
ARFC
CKE
!
t
ARFC
(min)
!0.2V
X 8 / X 16
X 8 / X 16
210
6
185
6
175
6
mA
mA
2
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
6
Integrated Silicon Solution, Inc. — www.issi.com
Rev.
C
04/02/09
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
