IS42S81600E
IS42S16800E
16M x 8, 8M x16
128Mb SYNCHRONOUS DRAM
JUNE 2009
FEATURES
• Clock frequency: 200, 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
IS42S81600E
IS42S16800E
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
• Industrial Temperature Availability
V
dd
V
ddq
3.3V 3.3V
3.3V 3.3V
OVERVIEW
ISSI
's 128Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The 128Mb SDRAM is organized as follows.
IS42S81600E
4M x8 x4 Banks
54-pin TSOPII
IS42S16800E
2M x16 x4 Banks
54-pin TSOPII
54-ball TF-BGA
KEY TIMING PARAMETERS
Parameter
Clk Cycle Time
CAS Latency = 3
CAS Latency = 2
Clk Frequency
CAS Latency = 3
CAS Latency = 2
Access Time from Clock
CAS Latency = 3
CAS Latency = 2
-5
5
10
200
100
5.0
6.5
-6
6
10
166
100
5.4
6.5
-7
7
10
143
100
5.4
6.5
-75E
—
7.5
—
133
—
5.5
Unit
ns
ns
Mhz
Mhz
ns
ns
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain
the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
05/27/09
1
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
