IS42S32160A
4M
Words x 32 Bits x 4 Banks (512-MBIT)
SYNCHRONOUS DYNAMIC RAM
FEATURES
· Concurrent auto precharge
· Clock rate: 133 MHz
· Fully synchronous operation
· Internal pipelined architecture
· Four internal banks (4M x 32bit x 4bank)
· Programmable Mode
-CAS#Latency:2 or 3
-Burst Length:1,2,4,8,or full page
-Burst Type:interleaved or linear burst
· Burst stop function
· Individual byte controlled by DQM0-3
· Auto Refresh and Self Refresh
·
8K
refresh cycles/64ms
· 8K refresh cycles/32ms for Industrial grade
· Single +3.3V ±0.3V power supply
· Interface:LVTTL
· Package:
8x13mm, 90 Ball
LF-BGA,
Ball pitch 0.8mm,
Ball size 0.45mm
· Pb-free package is available.
· Available in Industrial Temperature
PRELIMINARY INFORMATION
JULY
2009
DESCRIPTION
The
ISSI
IS42S32160A is a high-speed
CMOS
configured as a quad
4M
x 32 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal,CLK).
It is internally configured by stacking two 256Mb,
16 Meg x 16 devices. Each of the 4M x 32 bit banks is
organized as
8192
rows
by 512 columns by 32 bits.
Read and write accesses start
at a selected locations
in a programmed sequence.
Accesses begin with
the registration of a BankActive
command which is
then followed by a Read or Write
command.
The
ISSI
IS42S32160A
provides for
programmable
Read or Write burst lengths of 1,2,4,8,or
full page, with
a burst termination operation. An auto
precharge
function may be enable to provide a self-timed
row
precharge that is initiated at the end of the burst
sequence.The refresh functions, either Auto or
Self
Refresh are easy to use.
By having a programmable mode register,the system
can choose the most suitable modes to maximize its
performance.
These devices are well suited for applications requiring
high memory bandwidth.
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
1
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
