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IS42S16160C-7TL 参数 Datasheet PDF下载

IS42S16160C-7TL图片预览
型号: IS42S16160C-7TL
PDF下载: 下载PDF文件 查看货源
内容描述: 256 MB单倍数据速率同步DRAM [256 Mb Single Data Rate Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 40 页 / 1540 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS42S83200C  
IS42S16160C  
Write operation  
Burst write or single write mode is selected  
1. Burst write: A burst write operation is enabled by setting OPCODE (A9, A8) to (0, 0). A burst write starts in the same clock  
as a write command set. (The latency of data input is 0 clock.) The burst length can be set to 1, 2, 4 and 8, like burst read  
operations. The write start address is specified by the column address and the bank select address at the write command  
set cycle.  
.
2. Single write: A single write operation is enabled by setting OPCODE (A9, A8) to (1, 0). In a single write operation, data is  
only written to the column address and the bank select address specified by the write command set cycle without regard to  
the burst length setting. (The latency of data input is 0 clock).  
Integrated Silicon Solution, Inc. — www.issi.com  
17  
Rev. C  
04/02/09