IS42S32800D
IS45S32800D
8M x 32
256Mb SYNCHRONOUS DRAM
APRIL 2009
FEATURES
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 4096 refresh cycles every 16ms (A2 grade) or
64 ms (Commercial, Industrial, A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
OVERVIEW
ISSI
's 256Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The 256Mb SDRAM is organized in 2Meg x 32 bit x 4
Banks.
KEY TIMING PARAMETERS
Parameter
Clk Cycle Time
CAS Latency = 3
CAS Latency = 2
Clk Frequency
CAS Latency = 3
CAS Latency = 2
Access Time from Clock
CAS Latency = 3
CAS Latency = 2
-6
6
10
166
100
5.4
6.5
-7
7
10
143
100
5.4
6.5
-75E
—
Unit
ns
ns
Mhz
Mhz
ns
ns
7.5
—
133
—
5.5
ADDRESS TABLE
Parameter
Configuration
Refresh Count
Com./Ind.
A1
A2
Row Addresses
Column
Addresses
Bank Address
Pins
Autoprecharge
Pins
8M x 32
2M x 32 x 4 banks
4K / 64ms
4K / 64ms
4K / 16ms
A0 – A11
A0 – A8
BA0, BA1
A10/AP
OPTIONS
• Package:
86-pin TSOP-II
90-ball TF-BGA
• Operating Temperature Range:
Commercial (0
o
C to +70
o
C)
Industrial (-40
o
C to +85
o
C)
Automotive Grade, A1 (-40
o
C to +85
o
C)
Automotive Grade, A2 (-40
o
C to +105
o
C)
• Die Revision: D
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain
the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc.
- www.issi.com
Rev. B
03/27/09
1
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
