IS61C1024AL
IS64C1024AL
128K x 8 HIGH-SPEED CMOS STATIC RAM
ISSI
JANUARY 2005
®
FEATURES
• High-speed access time: 12, 15 ns
•
Low active power: 160 mW (typical)
•
Low standby power: 1000 µW (typical) CMOS
standby
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
• Commercial, industrial, and automotive tempera-
ture ranges available
• Lead free available
DESCRIPTION
The
ISSI
IS61C1024AL/IS64C1024AL is a very high-speed,
low power, 131,072-word by 8-bit CMOS static RAMs. They
are fabricated using
ISSI's
high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields higher
performance and low power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation
can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs,
CE1
and CE2. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS61C1024AL/IS64C1024AL is available in 32-pin 300-
mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20),
and 32-pin sTSOP (Type I, 8 x 13.4) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1
CE2
OE
WE
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
01/24/05
1
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
