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IS61LV12816L-10LQI 参数 Datasheet PDF下载

IS61LV12816L-10LQI图片预览
型号: IS61LV12816L-10LQI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16高速CMOS静态RAM与3.3V电源 [128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用:
文件页数/大小: 16 页 / 112 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS61LV12816L
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
Parameter
V
DD
Operating
Supply Current
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
(CMOS Inputs)
Test Conditions
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = max
V
DD
= Max.,
CE
V
DD
– 0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V, f = 0
Com.
Ind.
typ.
(2)
Com.
Ind.
Com.
Ind.
typ.
(2)
-8 ns
Min. Max.
65
70
50
30
35
3
4
700
-10 ns
Min. Max.
60
65
50
25
30
3
4
700
ISSI
Unit
mA
®
I
SB
1
mA
I
SB
2
mA
mA
µA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=3.3V, T
A
=25
o
C. Not 100% tested.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
5