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IS61LV12816L-8T 参数 Datasheet PDF下载

IS61LV12816L-8T图片预览
型号: IS61LV12816L-8T
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16高速CMOS静态RAM与3.3V电源 [128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 16 页 / 112 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS61LV12816L
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
DD
V
TERM
T
STG
P
T
Note:
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
–0.5 to 4.0V
–0.5 to V
DD
+ 0.5
–65 to + 150
1.0
Unit
V
V
°C
W
ISSI
®
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
OPERATING RANGE
Range
Ambient Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
V
DD
(8 n
S
)
3.3V + 10%, -5%
3.3V + 10%, -5%
V
DD
(10 n
S
)
3.3V + 10%
3.3V + 10%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Note:
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
(1)
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
Min.
2.4
2
–0.3
Max.
0.4
V
DD
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
GND
V
IN
V
DD
GND
V
OUT
V
DD
, Outputs Disabled
–1
–1
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05