IS61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
High-speed access time: 10, 12, and 15 ns
CMOS low power operation
TTL and CMOS compatible interface levels
Single 3.3V ± 10% power supply
Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
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ISSI
DESCRIPTION
®
FEBRUARY 2003
The
ISSI
IS61LV12816 is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using
ISSI
's high-performance CMOS technology. This
highly reliable process coupled with innovative circuit design
techniques, yields access times as fast as 10 ns with low
power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE.
The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61LV12816 is packaged in the JEDEC standard 44-
pin 400-mil SOJ, 44-pin TSOP (Type II), 44-pin LQFP, and
48-pin mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
CONTROL
CIRCUIT
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
02/05/2003
1
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
