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IS61LV25616-12T 参数 Datasheet PDF下载

IS61LV25616-12T图片预览
型号: IS61LV25616-12T
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16高速异步静态CMOS与3.3V供电的RAM [256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用:
文件页数/大小: 11 页 / 96 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS61LV25616
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (CE =
OE
= V
IL
,
UB
or
LB
= V
IL
)
t
RC
ADDRESS
ISSI
®
t
AA
t
OHA
D
OUT
PREVIOUS DATA VALID
t
OHA
DATA VALID
READ1.eps
READ CYCLE NO. 2
(1,3)
t
RC
ADDRESS
t
AA
OE
t
OHA
t
DOE
CE
t
HZOE
t
LZOE
t
ACE
t
LZCE
t
HZCE
LB, UB
D
OUT
HIGH-Z
t
LZB
t
BA
t
RC
DATA VALID
t
HZB
V
CC
Supply
Current
t
PU
50%
t
PD
I
CC
50%
I
SB
UB_CEDR2.eps
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE, CE, UB,
or
LB
= V
IL
.
3. Address is valid prior to or coincident with
CE
LOW transition.
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
09/29/00