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IS61LV5128-12T 参数 Datasheet PDF下载

IS61LV5128-12T图片预览
型号: IS61LV5128-12T
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8高速CMOS静态RAM [512K x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管输出元件输入元件
文件页数/大小: 9 页 / 75 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS61LV5128
512K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access times:
10, 12 and 15 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with
CE
and
OE
options
CE
power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 36-pin 400-mil SOJ
– 36-pin miniBGA
– 44-pin TSOP (Type II)
ISSI
®
JULY 2001
DESCRIPTION
The
ISSI
IS61LV5128 is a very high-speed, low power,
524,288-word by 8-bit CMOS static RAM. The IS61LV5128
is fabricated using
ISSI
's high-performance CMOS tech-
nology. This highly reliable process coupled with innova-
tive circuit design techniques, yields higher performance
and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS61LV5128 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV5128 is available in 36-pin 400-mil SOJ, 36-
pin mini BGA, and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K X 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/16/01
1