IS61LV5128AL
WRITE CYCLE NO. 2
(1,2)
(WE Controlled:
OE
is HIGH During Write Cycle)
t
WC
ADDRESS
VALID ADDRESS
ISSI
®
t
HA
OE
CE
LOW
t
AW
t
PWE1
WE
t
SA
D
OUT
DATA UNDEFINED
t
HZWE
HIGH-Z
t
LZWE
t
SD
D
IN
t
HD
DATA
IN
VALID
CE_WR2.eps
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
> V
IH
.
WRITE CYCLE NO. 3
(WE Controlled:
OE
is LOW During Write Cycle)
t
WC
ADDRESS
VALID ADDRESS
OE
CE
LOW
t
HA
LOW
t
AW
t
PWE2
WE
t
SA
D
OUT
DATA UNDEFINED
t
HZWE
HIGH-Z
t
LZWE
t
SD
D
IN
t
HD
DATA
IN
VALID
CE_WR3.eps
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/15/05
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
