IS61LV51216
512K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
• High-speed access time:
— 8, 10, and 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 m
A
(typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
ISSI
MARCH 2005
®
DESCRIPTION
The
ISSI
IS61LV51216 is a high-speed, 8M-bit static RAM
organized as 525,288 words by 16 bits. It is fabricated using
ISSI
's high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields high-performance and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE.
The active LOW Write Enable
(WE) controls both writing and reading of the memory. A data
byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS61LV51216 is packaged in the JEDEC standard
44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
03/10/05
1
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
