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IS62C256AL-25TI 参数 Datasheet PDF下载

IS62C256AL-25TI图片预览
型号: IS62C256AL-25TI
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8低功耗CMOS静态RAM [32K x 8 LOW POWER CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 92 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS65C256AL
IS62C256AL
AC WAVEFORMS
WRITE CYCLE NO. 2
(OE is HIGH During Write Cycle)
(1,2)
t
WC
ADDRESS
VALID ADDRESS
ISSI
®
t
HA
OE
CE
LOW
t
AW
t
PWE1
WE
t
SA
D
OUT
DATA UNDEFINED
t
HZWE
HIGH-Z
t
LZWE
t
SD
D
IN
t
HD
DATA
IN
VALID
CS_WR2.eps
WRITE CYCLE NO. 3
(OE is LOW During Write Cycle)
(1)
t
WC
ADDRESS
OE
CE
VALID ADDRESS
LOW
t
HA
LOW
t
AW
WE
t
PWE2
t
LZWE
HIGH-Z
t
SA
D
OUT
DATA UNDEFINED
t
HZWE
t
SD
D
IN
t
HD
DATA
IN
VALID
CS_WR3.eps
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.
2. I/O will assume the High-Z state if
OE
= V
IH
.
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/17/06