IS65C256AL
IS62C256AL
32K x 8 LOW POWER CMOS STATIC RAM
ISSI
MARCH 2006
®
FEATURES
• Access time: 25 ns, 45 ns
• Low active power: 200 mW (typical)
• Low standby power
— 150 µW (typical) CMOS standby
— 15 mW (typical) operating
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V power supply
• Lead-free available
• Industrial and Automotive temperatures avail-
able
DESCRIPTION
The
ISSI
IS62C256AL/IS65C256AL is a low power,
32,768 word by 8-bit CMOS static RAM. It is fabricated
using
ISSI
's high-performance, low power CMOS tech-
nology.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 150 µW (typical) at CMOS input levels.
Easy memory expansion is provided by using an active
LOW Chip Select (CE) input and an active LOW Output
Enable (OE) input. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS62C256AL/IS65C256AL is pin compatible with
other 32Kx8 SRAMs in plastic SOP or TSOP (Type I)
package.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K X 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
03/17/06
1
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
