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IS62C256AL-45TI 参数 Datasheet PDF下载

IS62C256AL-45TI图片预览
型号: IS62C256AL-45TI
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8低功耗CMOS静态RAM [32K x 8 LOW POWER CMOS STATIC RAM]
分类和应用:
文件页数/大小: 12 页 / 92 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS65C256AL
IS62C256AL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
1
Parameter
V
DD
Operating
Supply Current
V
DD
Dynamic Operating
Supply Current
Test Conditions
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
-25 ns
Min. Max.
15
20
25
15
5
100
120
150
15
20
50
5
25
30
35
ISSI
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.
(2)
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.
(2)
-45 ns
Min. Max.
15
20
25
12
100
120
150
15
20
50
µA
20
25
30
Unit
mA
®
I
CC
2
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
V
DD
= Max.,
CE
V
DD
– 0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V, f = 0
I
SB
2
µA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 5.0V, T
A
= 25
o
C and not 100% tested.
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 5.0V.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/17/06