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IS62C256AL-45TLI 参数 Datasheet PDF下载

IS62C256AL-45TLI图片预览
型号: IS62C256AL-45TLI
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8低功耗CMOS静态RAM [32K x 8 LOW POWER CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 92 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS65C256AL
IS62C256AL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE
Access Time
OE
Access Time
OE
to Low-Z Output
OE
to High-Z Output
CE
to Low-Z Output
CE
to High-Z Output
CE
to Power-Up
CE
to Power-Down
-25 ns
Min. Max.
25
2
0
0
3
0
0
25
25
13
12
12
20
-45 ns
Min.
Max.
45
2
0
0
3
0
0
45
45
25
20
20
30
ISSI
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
t
RC
t
AA
t
OHA
t
ACS
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCS
(2)
t
HZCS
(2)
t
PU
(3)
t
PD
(3)
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
480
Ω
5V
5V
480
Ω
OUTPUT
100 pF
Including
jig and
scope
255
Ω
OUTPUT
5 pF
Including
jig and
scope
255
Ω
Figure 1.
Figure 2.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/17/06
5