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IS62C256-70U 参数 Datasheet PDF下载

IS62C256-70U图片预览
型号: IS62C256-70U
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8低功耗CMOS静态RAM [32K x 8 LOW POWER CMOS STATIC RAM]
分类和应用:
文件页数/大小: 8 页 / 40 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS62C256
32K x 8 LOW POWER CMOS STATIC RAM
FEATURES
• Access time: 45, 70 ns
• Low active power: 200 mW (typical)
• Low standby power
— 250
µW
(typical) CMOS standby
— 28 mW (typical) TTL standby
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V power supply
ISSI
®
DESCRIPTION
The
ISSI
IS62C256 is a low power, 32,768 word by 8-bit
CMOS static RAM. It is fabricated using
ISSI
's high-
performance, low power CMOS technology.
When
CS
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
250
µW
(typical) at CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Select (
CS
) input and an active LOW Output Enable (
OE
)
input. The active LOW Write Enable (
WE
) controls both writing
and reading of the memory.
The IS62C256 is pin compatible with other 32K x 8 SRAMs in
plastic SOP or TSOP (Type I) package.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K X 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CS
OE
WE
CONTROL
CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
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