IS62LV1288LL
128K x 8 LOW POWER and LOW Vcc
CMOS STATIC RAM
FEATURES
• Access times of 45, 55, and 70 ns
•
Low active power: 60 mW (typical)
•
Low standby power: 15 µW (typical) CMOS
standby
• Low data retention voltage: 2V (min.)
• Ultra Low Power
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• TTL compatible inputs and outputs
• Single 2.5V (min.) to 3.45V (max.) power supply
• Industrial temperature available
• Available in 32-pin TSOP (Type I), 32-pin
STSOP, and 450-mil SOP
ISSI
DESCRIPTION
®
FEBUARY 2001
The
ISSI
IS62LV1288LL is a low power and low
Vcc,131,072-word by 8-bit CMOS static RAM. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields higher
performance and low power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the
device assumes a standby mode at which the power
dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs,
CE1
and CE2. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS62LV1288LL is available in 32-pin TSOP (Type I),
STSOP (8 x 13.4mm), and 450-mil plastic SOP (525-mil
pin to pin) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
512 X 2048
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1
CE2
OE
WE
CONTROL
CIRCUIT
This document contISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no
responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/22/01
1
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
