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IS62WV25616BLL-55BLI 参数 Datasheet PDF下载

IS62WV25616BLL-55BLI图片预览
型号: IS62WV25616BLL-55BLI
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16低电压,超低功耗CMOS静态SRAM [256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 14 页 / 112 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IS62WV25616BLL-55BLI的Datasheet PDF文件第3页浏览型号IS62WV25616BLL-55BLI的Datasheet PDF文件第4页浏览型号IS62WV25616BLL-55BLI的Datasheet PDF文件第5页浏览型号IS62WV25616BLL-55BLI的Datasheet PDF文件第6页浏览型号IS62WV25616BLL-55BLI的Datasheet PDF文件第8页浏览型号IS62WV25616BLL-55BLI的Datasheet PDF文件第9页浏览型号IS62WV25616BLL-55BLI的Datasheet PDF文件第10页浏览型号IS62WV25616BLL-55BLI的Datasheet PDF文件第11页  
IS62WV25616ALL, IS62WV25616BLL
ISSI
®
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (CS1 =
OE
= V
IL
,
WE
= V
IH
,
UB
or
LB
= V
IL
)
t
RC
ADDRESS
t
AA
t
OHA
t
OHA
DATA VALID
D
OUT
PREVIOUS DATA VALID
READ CYCLE NO. 2
(1,3)
(CS1,
OE,
AND
UB/LB
Controlled)
t
RC
ADDRESS
t
AA
t
OHA
OE
t
DOE
t
HZOE
CS1
t
ACE1
t
LZOE
t
LZCE1
t
HZCS1
LB
,
UB
t
BA
t
LZB
t
HZB
DOUT
HIGH-Z
DATA VALID
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE, CS1, UB,
or
LB
= V
IL
.
WE=V
IH
.
3. Address is valid prior to or coincident with
CS1
LOW transition.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
05/02/05
7