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IS62WV6416BLL-55BLI 参数 Datasheet PDF下载

IS62WV6416BLL-55BLI图片预览
型号: IS62WV6416BLL-55BLI
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×16低电压,超低功耗CMOS静态RAM [64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM]
分类和应用:
文件页数/大小: 17 页 / 111 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IS62WV6416BLL-55BLI的Datasheet PDF文件第5页浏览型号IS62WV6416BLL-55BLI的Datasheet PDF文件第6页浏览型号IS62WV6416BLL-55BLI的Datasheet PDF文件第7页浏览型号IS62WV6416BLL-55BLI的Datasheet PDF文件第8页浏览型号IS62WV6416BLL-55BLI的Datasheet PDF文件第10页浏览型号IS62WV6416BLL-55BLI的Datasheet PDF文件第11页浏览型号IS62WV6416BLL-55BLI的Datasheet PDF文件第12页浏览型号IS62WV6416BLL-55BLI的Datasheet PDF文件第13页  
IS62WV6416ALL, IS62WV6416BLL
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (CS1 =
OE
= V
IL
, CS2 =
WE
= V
IH
,
UB
or
LB
= V
IL
)
ISSI
®
t
RC
ADDRESS
t
AA
t
OHA
t
OHA
DATA VALID
D
OUT
PREVIOUS DATA VALID
AC WAVEFORMS
READ CYCLE NO. 2
(1,3)
(CS1, CS2,
OE,
AND
UB/LB
Controlled)
t
RC
ADDRESS
t
AA
t
OHA
OE
t
DOE
t
HZOE
CS1
t
ACE1/
t
ACE2
t
LZOE
CS2
t
LZCE1/
t
LZCE2
t
HZCS1/
t
HZCS2
LB
,
UB
t
BA
t
LZB
t
HZB
DOUT
HIGH-Z
DATA VALID
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE, CS1, UB,
or
LB
= V
IL
. CS2=WE=V
IH
.
3. Address is valid prior to or coincident with
CS1
LOW transition.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/03/05
9